Gas-Phase Nature of Si-N Bond Formation in the Self-Propagating High-Temperature Synthesis of Silicon Nitride by the Azide Method

摘要

This study has demonstrated the possibility of the gas-phase nitrogenation of a volatile silicon-containing compound under spark and RF discharge conditions. This reaction yields electronically excited SiN radicals. Therefore, silicon nitride formation in the azide process can take place in the gas phase. The condensation of the gaseous product affords a nanosized powder [3]. Ammonium chloride has a much greater nitrogenizing capacity than sodium azide.