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首页> 外文期刊>Mendeleev Communications >Gaseous nature of the reaction of Si-N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method
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Gaseous nature of the reaction of Si-N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method

机译:叠氮化法自蔓延高温合成氮化硅中Si-N键形成反应的气体性质

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摘要

Both solid sodium azide and ammonium chloride react with volatile silicon-containing compounds under external initiation; in the reactions Si-N bond forms as evidenced by detecting the emission spectrum of SiN (C-A(2)P) radicals.
机译:固体叠氮化钠和氯化铵都在外部引发下与挥发性的含硅化合物反应;在反应中,通过检测SiN(C-A(2)P)自由基的发射光谱可以证明形成了Si-N键。

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