A 474 GHz HBV Frequency Quintupler Integrated on a 20 src='/images/tex/1025.gif' alt='mu{hbox {m}}'> Thick Silicon Substrate

摘要

We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler (5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 ) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.