A LOW VOLTAGE-TYPE SENSE AMPLIFIER DESIGN FOR EEPROM MEMORY

摘要

To ensure both the reduced reading power and the enhanced reliability of the nonvolatile memories like EEPROM embedded in RFID transponders, a new low voltage-type sense amplifier (SA) is designed. The topology of the designed sense amplifier uses a voltage sensing method, with low cost, low power consumption as well as high reliability. The sense amplifier was designed in CEDEC 0.18-μm CMOS embedded EEPROM process with the 3.7 V power supply. Simulation results showed that the circuit is able to operate between IV to 3.7 V within the temperature range from -25℃ to 125℃. The novel topology allows the circuit to function with power supplies as low as IV. The simulations show that the new voltage-type sense amplifier required lower voltage than the previously reported voltage-type sense amplifier by Liu et al. Additionally the MOS size used for this circuit is 0.18-μm, which reduced the size of the circuit.