RESONANCE FREQUENCY OF GUNN DIODES ON THE BASIS OF AlGaAs, GaPAs AND GaSbAs GRADED GAP SEMICONDUCTORS

摘要

Disappearance of a drifting domain in devices on the basis of graded gap semiconductors has been studied. It has been shown that the length of drift region of the domain and the frequency of the generated current oscillations in the n~*-n-n~* -devices on the basis of graded gap semiconductors depends on the voltage applied to the device. The conditions of existence of this effect have been found. It has been shown that usage of graded gap semiconductors allows increasing width of the working range of frequencies of Gunn diodes. The review of A3B5 graded gap semiconductors having the similar effect has been performed.