RESONANCE FREQUENCIES OF GUNN DIODES BASED ON NITRIDE GRADED-GAP SEMICONDUCTORS

I.P. Storozhenko

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RESONANCE FREQUENCIES OF GUNN DIODES BASED ON NITRIDE GRADED-GAP SEMICONDUCTORS

机译：基于氮化物梯度间隙半导体的枪支二极管共振频率

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摘要

A domain drift and current oscillations have been studied in devices based on the graded-gap semiconductors. It is shown that the use of graded-gap semiconductors can increase the operating frequency band of the Gunn diodes. A survey of properties of A_3B_5 semiconductors oj the kind is presented.

机译：已经在基于梯度隙半导体的器件中研究了域漂移和电流振荡。结果表明，使用梯度隙半导体可以提高耿氏二极管的工作频带。本文介绍了A_3B_5半导体的性质。

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来源
《Telecommunications and Radio Engineering》 |2014年第13期|1201-1207|共7页
作者
I.P. Storozhenko;
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作者单位

National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine;

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收录信息美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Gunn diode; graded-gap semiconductor; nitride semiconductor; intervalley electron transfer; resonance frequency;

机译：耿氏二极管;梯度隙半导体氮化物半导体间隔电子转移共振频率;

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专利

1. RESONANCE FREQUENCY OF GUNN DIODES ON THE BASIS OF AlGaAs, GaPAs AND GaSbAs GRADED GAP SEMICONDUCTORS [J] . I.P. Storozhenko, E.N. Zhivotova Telecommunications and Radio Engineering . 2011,第14期

机译：基于AlGaAs，GaPAs和GasbAs梯度Gap半导体的Gunn二极管的共振频率
2. Simulation of gallium nitride Gunn diodes at various doping levels and temperatures for frequencies up to 300 GHz by Monte Carlo simulation, and incorporating the effects of thermal heating [J] . R F Macpherson, G M Dunn, N J Pilgrim Semiconductor science and technology . 2008,第5期

机译：通过蒙特卡洛模拟仿真各种掺杂水平和温度下高达300 GHz频率的氮化镓耿氏二极管，并结合了热效应
3. Modelling the Gunn Diodes Based on Variband Semiconductors [J] . I.P. Storozhenko Telecommunications and Radio Engineering . 2003,第1a2期

机译：基于Variband半导体的耿氏二极管建模
4. Resonance frequency of Gunn diodes based on #x0410;3#x0412;5 graded-gap semiconductors [C] . Zhivotova E. N., Storozhenko I. P. International Crimean Conference on Microwave Telecommunication Technology . 2012

机译：基于А335分级间隙半导体的Gunn二极管的共振频率
5. Bulk gallium nitride based electronic devices: Schottky diodes, Schottky-type ultraviolet photodetectors and metal-oxide-semiconductor capacitors . [D] . Zhou, Yi. 2007

机译：基于体氮化镓的电子设备：肖特基二极管，肖特基型紫外光电探测器和金属氧化物半导体电容器。
6. Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces [O] . Yoshihiro Irokawa 2011

机译：使用基于氮化物的半导体二极管的氢传感器：金属/半导体界面的作用
7. Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces [O] . Irokawa, Yoshihiro 2011

机译：使用基于氮化物的半导体二极管的氢传感器：金属/半导体界面的作用
8. Investigation of Low Frequency Noise Properties of Wide Gap Semiconductors, SiC and GaN, and the Main Properties of the SiC Based Power Devices, Diodes and Thyristors [R] . Levinshtein, M. E. 2000

机译：宽间隙半导体，siC和GaN的低频噪声特性研究，以及siC基功率器件，二极管和晶闸管的主要特性

RESONANCE FREQUENCIES OF GUNN DIODES BASED ON NITRIDE GRADED-GAP SEMICONDUCTORS

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