MACROSCOPIC FACTORS APPLIED TO THE RECONSIDERATION OF MINORITY CARRIER DIFFUSION IN NANOSCALE SI WIRE P-N JUNCTIONS

摘要

This paper investigated the minority carrier diffusion and recombination process in a nanoscale Si wire with the aid of 3-D device simulations. Comparing simulation results obtained by using a quasi-atomic model with those of the conventional jellium model, we observed that the forward-current level is reduced by about 3 orders of magnitude in the former. This simulation characteristic was then compared with experimental results. We conclude that the experimental results roughly support the quasi-atomic model. As a result, for the nanoscale Si wire p-n junctions examined in this study, the conventional jellium model lacks utility when considering the minority carrier behavior.