...
首页> 外文期刊>Surface Science >Diffusion-limited submonolayer pentacene thin film growth on hydrogen-passivated Si(111) substrates
【24h】

Diffusion-limited submonolayer pentacene thin film growth on hydrogen-passivated Si(111) substrates

机译:氢钝化Si(111)衬底上扩散受限的亚单层并五苯薄膜的生长

获取原文
获取原文并翻译 | 示例

摘要

Growth of ultrathin pentacene films is investigated as a function of coverage by atomic force microscopy. Initially, pentacene grows as monolayer fractal islands and evolves into compact islands before coalescence. Stabilization factors, against diffusion-limited-aggregation in terms of interaction between islands and interlayer monomer transport, are proposed to explain the shape transition. Simulations based on a simple model of heterogeneous film growth are found to agree with experimental observations. The role of surface diffusion in island shape transition is revealed by a comparison between pentacene growth on the hydrogen terminated and oxidized Si substrates.
机译:通过原子力显微镜研究超薄并五苯薄膜的生长与覆盖率的关系。最初,并五苯以单层分形岛的形式生长,并在聚结之前演变成紧密的岛。提出了针对岛之间的相互作用和层间单体传输的抗扩散限制聚集的稳定因子来解释形状转变。发现基于异质膜生长的简单模型的模拟与实验观察结果一致。通过在氢封端的硅基底和氧化的硅基底上并五苯生长的比较,揭示了表面扩散在岛形转变中的作用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号