AlN, GaN and InN(001) surface electronic band structure

摘要

We have studied the electronic band structure of the ideal (0 0 1) surface of AlN, GaN and InN in the zinc-blende phase. We have employed an empirical sp(3)s*d(5) Hamiltonian with nearest-neighbor interactions including spin-orbit coupling and the surface Green function matching method. We have obtained the different surface states together with their corresponding orbital character and localization in the different layers. A similar physical picture is obtained for the three materials. (c) 2006 Elsevier B.V. All rights reserved.