Following the oxidation of yttrium silicide epitaxially grown on Si(111) by core level photoemission spectroscopy

摘要

We have identified, by means of synchrotron radiation X-ray photoemission spectroscopy, several core-level shifted components in the Si-2p photoemission core level peak from a thin yttrium silicide layer epitaxially grown on a Si(111) surface. We have unequivocally assigned these components to different environments of the Si atoms in the silicide structure. This information has been used to monitor a surface oxidation process promoted by room temperature oxygen adsorption, identifying the final product of this reaction as a silicate-type tertiary compound. (c) 2005 Elsevier B.V. All rights reserved.