Scanning tunneling microscopy luminescence from nanoscale surface of GaAs(110)

摘要

Scanning tunneling microscopy luminescence (STML) was induced from the nanometer scale surfaces of cleaved n-type and p-type GaAs(110) wafers by using of an ITO-coated optical fiber probe in an ultrahigh-vacuum chamber. The STML from n-type GaAs(110) surface was induced under negative sample bias when the applied bias exceeds a threshold voltage around -1.5 V. Whereas the STML from p-type GaAs(110) surface was induced under positive sample bias when the applied bias exceeds a threshold voltage around +1.5 V. The excitation energies at the threshold voltages are consistent with the band gap of GaAs (1.42 eV) at 295 K. The typical quantum efficiencies for n-type and p-type GaAs are about 3 × 10~(-5) and 2 × 10~(-4) photons/electron, respectively. The observed STML from are attributed to a radiative recombination of electron-hole pairs generated by a hole injection for n-type GaAs under negative sample bias and an electron injection for p-type GaAs under positive sample bias, respectively.