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Nucleation, growth and morphology of Co thin films on Ag(110)

机译:Ag(110)上Co薄膜的形核,生长和形貌

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Scanning tunneling microscopy (STM) experiments reveal that Co growth on Ag(110), at coverages of Co < 1 ML and low substrate temperatures (~150 K), involves a concomitant insertion of Co into the top Ag layer and exchange of Ag out onto the surface. At 300 K, coverages of Co > 1 ML gives rise to a 3D nanocluster growth on the surface, with the clusters covered by Ag. Depending slightly on coverage, the clusters have a typical diameter of ~3 nm and a height of ~0.4 nm. Upon annealing to ~500 K, major changes are observed in the morphology of the surface. STM and AES show that there is a reduction of the number of Co islands on the surface, partly due to subsurface Co cluster migration and partly due to sintering into larger clusters.
机译:扫描隧道显微镜(STM)实验表明,在Co <1 ML的覆盖率和较低的底物温度(〜150 K)下,在Ag(110)上生长Co的过程包括伴随着Co插入顶层Ag层并交换出Ag到表面上。在300 K时,Co> 1 ML的覆盖范围会在表面上产生3D纳米簇生长,并且簇被Ag覆盖。略微取决于覆盖范围,这些簇的典型直径约为3 nm,高度约为0.4 nm。退火至〜500 K时,观察到表面形态发生了重大变化。 STM和AES表明,表面上Co岛的数量减少了,部分原因是由于地下Co团簇的迁移,另一部分是烧结成更大的团簇。

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