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Structural, electronic and energetic properties of water adsorbed on β-Si_3N_4 (0001) surface: First-principles calculations

机译:吸附在β-Si_3N_4(0001)表面上的水的结构,电子和能量性质:第一性原理计算

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摘要

Structural, energetic and electronic properties of water molecules adsorbed on β-Si_3N_4 (0001) surface, at various coverages, are investigated using density functional theory. At low coverages (0 ≤ 0.5), it is found that all H_2O molecules undergo spontaneous dissociation forming hydroxyl (OH) and imino (NH) groups where the reactive sites are identified, a result shown for the first time using ab initio theory. For higher coverages (0 > 0.5), only partial dissociation takes place where some of the molecules stay intact being bound via H-bond in good agreement with experimental findings. The driving force for the water dissociation has been identified to be dangling bonds on lower coordinated N and Si surface atoms showing that not all surface atoms are reactive corroborating with previous experimental findings.
机译:利用密度泛函理论研究了在不同覆盖率下吸附在β-Si_3N_4(0001)表面上的水分子的结构,能量和电子性质。在低覆盖率(0≤0.5)下,发现所有H_2O分子都会自发离解,形成羟基(OH)和亚氨基(NH),并在其中识别出反应位点,这是从头算理论上首次得到的结果。对于更高的覆盖率(0> 0.5),只有部分解离发生,其中一些分子保持完整,并通过H键与实验结果很好地结合在一起。已经发现水离解的驱动力是在较低配位的N和Si表面原子上的悬空键,表明并非所有表面原子都具有反应性,这与先前的实验结果相符。

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  • 来源
    《Surface Science》 |2010年第6期|617-622|共6页
  • 作者单位

    Division of Material Theory Group, Department of Physics and Materials Science, Uppsala University, Box 530, S-751 21 Uppsala, Sweden;

    Division of Material Theory Group, Department of Physics and Materials Science, Uppsala University, Box 530, S-751 21 Uppsala, Sweden Applied Materials Physics, Department of Materials and Engineering, Royal Institute of Technology (KTH), S-100 44 Stockholm, Sweden;

    rnDivision of Material Theory Group, Department of Physics and Materials Science, Uppsala University, Box 530, S-751 21 Uppsala, Sweden Applied Materials Physics, Department of Materials and Engineering, Royal Institute of Technology (KTH), S-100 44 Stockholm, Sweden;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    water-semiconductor interface; silicon nitride; density functional theory;

    机译:水-半导体界面;氮化硅密度泛函理论;

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