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DFT study of self-coupling reaction of CF_(2(ads)) coadsorbed on Cu(111) surface for forming CF2=CF_(2(g))

机译:DFT研究共吸附在Cu(111)表面上的CF_(2(ads))的自耦合反应形成CF2 = CF_(2(g))

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摘要

Total energy calculations based on the density functional theory (DFT) with ultrasoft pseudopotential. generalized gradient spin-polarized approximation and the partial structural constraint path minimization (PSCPM) method were carried out to establish the energetically more favorable reaction pathways for the self-coupling reaction of coadsorbed CF_(2(ads)) leading to the formation of CF_2=CF_(2(ads)) on the Cu(111) surface. In addition, the calculated electronic properties, namely partial density of states (PDOS), suggest that the initial breaking of the Cu(111)-CF_(2(ads)) bond associating with the electron delocalization on the Cu(111) surface and the electron transfer from Cu(111) to both units of CF_(2(ads)) are factors controlling the energy barrier for self-coupling reaction. Finally, the calculated energy barrier (0.310 eV) for the self-coupling reaction of CF_(2(ads)) coadsorbed on the Cu(111) surface in comparison with that (0.204 eV) for the single α-fluoride elimination of adsorbed CF_(3(ads)) on the Cu( 111) surface qualitatively manifests that the formation of CF_2 = CF_(2(g)) at 250 K is limited by the self-coupling reaction of coadsorbed CF_(2(ads)) instead of the single α-fluoride elimination of adsorbed CF_(3(ads)).
机译:基于具有超软伪势的密度泛函理论(DFT)的总能量计算。进行了广义梯度自旋极化近似和部分结构约束路径最小化(PSCPM)方法,为共吸附CF_(2(ads))的自耦合反应建立了能量上更有利的反应路径,从而形成了CF_2 = CF_(2(ads))在Cu(111)表面上。此外,计算的电子性质,即部分态密度(PDOS),表明Cu(111)-CF_(2(ads))键的初始断裂与Cu(111)表面上的电子离域有关,并且电子从Cu(111)转移到CF_(2(ads))的两个单元是控制自耦合反应能垒的因素。最后,计算出的共存于Cu(111)表面的CF_(2(ads))的自耦合反应的能垒(0.310 eV)与单个α氟化物消除吸附的CF_的能垒的(0.204 eV)相比。 Cu(111)表面上的(3(ads))定性表明,在250 K时CF_2 = CF_(2(g))的形成受到共吸附CF_(2(ads))的自偶联反应的限制,而不是单氟消除吸附的CF_(3(ads))。

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