Analytical modelling and simulation of negative capacitance junctionless FinFET considering fringing field effects

摘要

This article proposes an analytical model for channel potential and threshold voltage for negative capacitance junctionless FinFET (NC-JL FinFET). The Poisson's equation has been solved in collaboration with Landau-Khalatnikov equation to obtain analytical model for electrostatic potential distribution, threshold voltage and DIBL. The effect of fringing field on the potential distribution function due to source/drain spacer has also been taken into consideration. The re-sults of proposed models are also validated and compared with simulated results of Sentaurus TCAD device simulator. The effect of various physical parameters like thickness of ferroelectric layer, fin thickness, spacer length, gate dielectric constant etc. on the performance of device has been studied. Further, the performance is also examined for different technology nodes and its (in context of) SCEs.