...
首页> 外文期刊>Superlattices and microstructures >Fabrication and TCAD validation of ambient air-processed ZnO NRs/CH_3NH_3PbI_3/spiro-OMeTAD solar cells
【24h】

Fabrication and TCAD validation of ambient air-processed ZnO NRs/CH_3NH_3PbI_3/spiro-OMeTAD solar cells

机译:环境空气加工ZnO NRS / CH_3NH_3PBI_3 / SPIRO-OMETAD太阳能电池的制造和TCAD验证

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

This paper reports the fabrication, characterization and simulation of hybrid perovskite solar cells (PSCs) in ambient condition. The proposed PSC structures use a CH_3NH_3PbI_3 hybrid perovskite based active layer sandwiched between a ZnO nanorods (NRs) electron transport layer (ETL) and a spiro-OMeTAD (undoped and doped) hole transport layer (HTL). The ZnO NRs are grown using low-cost solvothermal process at relatively low temperature. The performance of fabricated PSCs are analyzed for both the undoped and doped (with TBP and LiTFSI) spiro-OMeTAD based HTLs. All the solar parameters namely, short circuit current density (J_(SC)), open circuit voltage (V_(OC)), fill factor (FF), power conversion efficiency (PCE) and external quantum efficiency (EQE) are calculated from experimentally measured current density versus voltage (J-V) and wavelength transient characteristics in ambient condition. The maximum PCE of 10.18% is obtained for the doped HTL whereas 9.51% for undoped HTL. The improved performance due to HTL doping is attributed to the enhanced charge transportation of the HTL. The experimental results obtained from the fabricated PSCs are also compared with the SetFos™ TCAD simulation data using drift-diffusion model. The simulated results are observed to be well matched to the experimental data.
机译:本文在环境条件下报道了杂交钙酸盐太阳能电池(PSC)的制造,表征和模拟。所提出的PSC结构使用基于CH_3NH_3PBI_3杂交钙钛矿的活性层夹在ZnO纳米棒(NRS)电子传输层(ETL)和螺旋 - 欧姆特(未掺杂和掺杂)空穴传输层(HTL)之间。在相对低的温度下使用低成本溶剂热过程生长ZnO NR。对未掺杂和掺杂的(用TBP和LITFSI)的HTLS进行分析制造的PSC的性能。所有太阳能参数即短路电流密度(J_(SC)),开路电压(V_(OC)),填充因子(FF),功率转换效率(PCE)和外部量子效率(EQE)都是在实验上计算的测量的电流密度与电压(JV)和环境条件下的波长瞬态特性。为掺杂HTL获得10.18%的最大PCE,而未掺杂的HTL为9.51%。由于HTL掺杂引起的改进性能归因于HTL的增强电荷运输。使用漂移扩散模型与Setfos™TCAD模拟数据进行比较了从制造的PSC获得的实验结果。观察模拟结果与实验数据很好。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号