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Performance assessment of Gr/Si/Gr UV-photodetector: Design and optimization of graphene interdigitated electrodes

机译:GR / SI / GR紫外线光电探测器的性能评估:石墨烯交叉电极的设计与优化

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In this paper, a new p-Si-MSM-UV-photodetector (PD) based on graphene interdigitated electrodes (GrIE) is proposed to achieve the dual role of enhanced time response and superior responsivity. An overall performance comparison between the proposed GrIE/p-Si-based MSM PD design and the conventional Au/p-Si structure is carried out using new comprehensive analytical models. The obtained results indicate the outstanding capability of the proposed design for improving the MSM PD performance. Such enhancement can be attributed to the suppressed degradation related-shadowing effects, where the use of graphene transparent electrodes open up the route for improving the device optical behavior. In order to address the trade-off between speed and photoresponse properties, a new Figure of Merit (FoM) parameter that combines both performance criteria is proposed. The impact of GrIE geometrical parameters on the device FoM is also analyzed. Moreover, Particle Swarm Optimization (PSO) approach is proposed to boost up the device performance. It is found that the optimized GrIE/p-Si design pinpoints a new path toward simultaneously reaching a high responsivity (770 mA/W) with reduced time response (3 mu s). Therefore, the proposed design methodology not only outperforms the conventional Au/p-Si PD, but also enables bridging the gap between high-speed and ultrasensitive properties, making it suitable for high-performance sensing applications using 2D materials.
机译:在本文中,提出了一种基于石墨烯交叉电极(GRIE)的新的P-SI-MSM-UV光电探测器(PD),以实现增强的时间响应和优异响应度的双重作用。使用新的综合分析模型进行了所提出的Grie / P-Si基MSM PD设计和传统AU / P-Si结构之间的整体性能比较。所获得的结果表明提出了提高MSM PD性能的提出设计的出色能力。这种增强可以归因于抑制的劣化相关阴影效果,其中使用石墨烯透明电极打开用于改善装置光学行为的途径。为了解决速度和光响应属性之间的权衡,提出了结合绩效标准的新的优点(FOM)参数的新图。还分析了Grie几何参数对器件FOM的影响。此外,提出了粒子群优化(PSO)方法来提高设备性能。发现优化的Grie / P-Si设计针对同时达到高响应度(770mA / W)的新路径,随着时间响应减少(3μs)。因此,所提出的设计方法不仅优于传统的AU / P-Si PD,而且还可以使高速和超敏性能之间的间隙桥接,使得适用于使用2D材料的高性能感测应用。

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