Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application

摘要

We have investigated the growth and electrical properties of crystalline Gd2O3 grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd2O3 islands with hexagonal structure were formed. Further growth resulted in the formation of flat layers in a mixture of [111]-oriented cubic bixbyite and monoclinic structure. The fabricated capacitors with 14 nm Gd2O3 exhibited suitable dielectric properties at room temperature; such as a dielectric constant of epsilon = 22, a leakage current of 10(-8) A/cm(2) @1 V and breakdown fields > 4.3 MV/cm. (c) 2006 Elsevier Ltd. All rights reserved.