Multiple Branch Growth Of Sno_2 Nanowires By Thermal Evaporation Process

摘要

The non-catalytic growth of single-crystalline branched SnO_2 nanowires was achieved on a silicon substrate via a simple thermal evaporation process. The morphological study by field emission scanning electron microscopy revealed that the branched nanowires grew at a high density over the whole substrate surface. It was observed that the formation of these nanostuctures is affected mainly by the growth temperature and partial Sn vapor pressure. Detailed structural characterizations by X-ray diffraction and using selected area electron diffraction patterns demonstrated that the grown nanowires consist of the tetragonal rutile phase and that the branches and stems grew along the [010] and [100] directions, respectively.