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Dual emissive Sn_((1-2x)) Cu_x Co_x O_2 nanostructures - A correlation study of doping concentration on structural, optical and electrical properties

机译:双发射Sn _((1-2x))Cu_x Co_x O_2纳米结构-掺杂浓度与结构,光学和电学性质的相关性研究

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摘要

A simplistic chemical co-precipitation route was adapted to synthesize Sn_((1-2x)) Cu_x Co_x O_2 (x = 0, 0.01 and 0.03) nanoparticles. The structural studies were carried out using X-ray diffraction pattern and the shift in diffraction peak, lattice constant and particle size with doping concentration was determined. The morphology of nanoparticles with an average size of 13-18 nm was observed using high-resolution transmission electron microscopy. A significant increase in the absorption edge with an increase in doping concentration was observed using ultraviolet-visible absorption spectroscopy. Further, the blue-shifted band gap value was plotted using Tauc's relation. The near-band-edge emission at 3.9 eV and the deep-level-emission at 2.4 eV were systematically examined by photoluminescence spectroscopy. The dependence of doping concentration on temperature-reliant electrical conductivity was examined using DC electrical measurements. A meticulous exploration on diffraction peak shift, the Burstein-Moss shift, the mechanism for dual emission and the decreased electrical conductivity in Sn_((1-2x)) Cu_x Co_x O_2 nanostructures were further discussed.
机译:采用简单的化学共沉淀途径合成了Sn _((1-2x))Cu_x Co_x O_2(x = 0,0.01 and 0.03)纳米粒子。使用X射线衍射图进行结构研究,并测定衍射峰,晶格常数和粒径随掺杂浓度的变化。使用高分辨率透射电子显微镜观察到平均粒径为13-18 nm的纳米颗粒的形貌。使用紫外-可见吸收光谱法观察到吸收边缘随掺杂浓度的增加而显着增加。此外,使用Tauc关系绘制蓝移带隙值。通过光致发光光谱系统地检查了3.9 eV处的近带边缘发射和2.4 eV处的深能级发射。使用直流电测量来检查掺杂浓度对温度依赖性电导率的依赖性。进一步探讨了Sn _((1-2x))Cu_xCo_xO_2纳米结构中衍射峰位移,Burstein-Moss位移,双发射机理和电导率降低的细致探索。

著录项

  • 来源
    《Superlattices and microstructures》 |2014年第4期|66-75|共10页
  • 作者单位

    Division of Nanoscience and Technology, Anna University, BIT Campus, Tiruchirappalli 620 024, India;

    Division of Nanoscience and Technology, Anna University, BIT Campus, Tiruchirappalli 620 024, India;

    Centre for Nanoscience and Technology, Anna University, Chennai 600 025, India;

    Centre for Nanoscience and Technology, Anna University, Chennai 600 025, India;

    Department of Chemistry, Anna University, BIT Campus, Tiruchirappalli 620 024, India;

    Division of Nanoscience and Technology, Anna University, BIT Campus, Tiruchirappalli 620 024, India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Doping; Peak shift; Absorption edge; Oxygen vacancies;

    机译:掺杂峰移;吸收边氧空位;

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