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机译:SiC / Cu稀释的磁性半导体纳米多层膜的输运和磁性质研究
Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China;
Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China;
Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China;
Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China;
Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China;
Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China;
Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China;
SiC/Cu nano-multilayer; DMS; Transport property; Magnetic property;
机译:铜,铝和锂掺杂的ZnO稀磁半导体薄膜的磁性比较
机译:铜,铝和锂掺杂的ZnO稀磁半导体薄膜的磁性比较
机译:从头开始研究SiC基稀磁半导体的磁性
机译:AB Initio基于SiC稀释磁半导体磁性的计算
机译:锰掺杂铁磁II-VI和III-V稀磁半导体(DMS)的磁和磁传输研究。
机译:Ba(Zn1-2xMnxCux)2As2:Zn位点上带有Mn和Cu共掺杂的块状稀释铁磁半导体
机译:稀磁半导体Fe掺杂ZnO薄膜的制备和磁性
机译:II-VI半导体的特性:体晶,外延膜,量子阱结构和稀磁系统。材料研究学会研讨会论文集。第161卷