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机译:具有N型多晶硅二极管的新型低比导通电阻Hk-LDMOS
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu,610054, China;
College of Physical Science and Technology, Sichuan Province Key Laboratory of Microelectronics, Sichuan University, Chengdu, 610064,China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu,610054, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu,610054, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu,610054, China;
LDMOS; High-k (Hk); Electron accumulation layer; Breakdown voltage (BV); Specific on-resistance (R_(on.sp));
机译:硅衬底上的准垂直GaN肖特基势差二极管,1010高开/关电流比和低特定导通电阻
机译:具有低导通电阻的金刚石肖特基势垒二极管
机译:演示9 kV反向击穿和59mΩ-cm〜2的特定导通电阻AlGaN / GaN肖特基势垒二极管
机译:具有低开关损耗和低导通电阻的宽SOA和高可靠性60-100 V LDMOS晶体管
机译:具有沟槽底部源极触点的高密度,低导通电阻的沟槽横向功率MOSFET。
机译:具有增强的双栅极和部分P埋层的超低比导通电阻横向双扩散金属氧化物半导体晶体管
机译:一种改进的4H-SIC沟槽MOS屏障肖特基二极管,导通电阻较低