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Understanding the overall shape of the output characteristics from the change in the channel potential profile for nanowire FET

机译:从纳米线FET的沟道电势曲线变化中了解输出特性的整体形状

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We have shown the influence of the changing channel potential profile from its equilibrium profile on the overall shape of the output characteristics of a Nanowire FET which is operating under ballistic regime. The device has a nano-wire channel with an array of lattice points which is the surrounded by a coaxial metallic gate. There is a dielectric which isolates the channel from the metallic gate. The source and the drain electrodes are maintained at different chemical potentials μ_1 and μ_2 which gives rise to the channel current in the device. The physics and the modeling of this device have been understood in detail by studying the electrostatics of the channel.
机译:我们已经显示了从平衡状态变化的沟道电势曲线对在弹道状态下工作的纳米线FET输出特性的整体形状的影响。该设备具有纳米线通道,该通道具有晶格点阵列,该晶格点阵列被同轴金属门围绕。有一种将通道与金属栅极隔离的电介质。源极和漏极保持在不同的化学势μ_1和μ_2,这会增加器件中的沟道电流。通过研究通道的静电,已详细了解了此设备的物理原理和建模。

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