Short-range and long-range Coulomb interactions for 3D Monte Carlo device simulation with discrete impurity distribution

摘要

A 3D Monte Carlo (MC) device simulation model is developed for the treatment of discrete random dopant dis- tribution in sub-100 MOSFET. The electron-ion (e-i) interaction model is based on a suitable description of long- range Coulomb interaction included by a particle-mesh (PM) calculation method and short-range interaction taken into account by a scattering mechanism. Attention is given to the correct definition of the short-range domain and scattering model. This new approach is validated by computing the low-field electron drift mobility in Si by means of MC simulation of 3D resistors in the doping concentration range of 10~15 -6.4×10~19 cm~-3. A good agreement is found Between calculation and experimental data at 300 K.