机译:使用SiGe点作为应力源材料的MOSFET集成
DIMES, Delft University of Technology, Feldmannweg 17. 2628 CT Delft, The Netherlands;
DIMES, Delft University of Technology, Feldmannweg 17. 2628 CT Delft, The Netherlands , University of Zagreb, Unska 3, 10000 Zagreb, Croatia;
DIMES, Delft University of Technology, Feldmannweg 17. 2628 CT Delft, The Netherlands;
Forschungszentntm Jillich, Wiihelm Johnen Strasse, 52428 Jiilich, Germany;
Forschungszentntm Jillich, Wiihelm Johnen Strasse, 52428 Jiilich, Germany;
Johannes Kepler University Linz, Altenberger Strasse 69, A-4040 Linz, Austria;
Johannes Kepler University Linz, Altenberger Strasse 69, A-4040 Linz, Austria;
Institute for Integrative Nanosciences, 1FW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany;
Institute for Integrative Nanosciences, 1FW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany;
Institute for Integrative Nanosciences, 1FW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany;
University of Milano-Bicocca, Piazza dell'Ateneo Nuovo 1, 20126 Milano, Italy;
Institute for Microelectronics, Technical University Vienna, Vienna, Austria;
University of Milano-Bicocca, Piazza dell'Ateneo Nuovo 1, 20126 Milano, Italy;
University of Milano-Bicocca, Piazza dell'Ateneo Nuovo 1, 20126 Milano, Italy;
Forschungszentntm Jillich, Wiihelm Johnen Strasse, 52428 Jiilich, Germany;
Johannes Kepler University Linz, Altenberger Strasse 69, A-4040 Linz, Austria;
Johannes Kepler University Linz, Altenberger Strasse 69, A-4040 Linz, Austria;
DIMES, Delft University of Technology, Feldmannweg 17. 2628 CT Delft, The Netherlands;
University of Milano-Bicocca, Piazza dell'Ateneo Nuovo 1, 20126 Milano, Italy;
机译:具有SiGe通道和嵌入式SiGe源/漏应力源的应变pMOSFET的特性和热载流子效应
机译:结合CESL应力源和SiGe通道的NMOSFET和PMOSFET器件的比较
机译:有序SiGe点上的应变MOSFET
机译:SIGE通道P-MOSFET中SN植入物和固相外延的SN植入物和固相外延的实现硅 - 锗 - 锡(Sigesn)源/漏液
机译:纳米结构的量子传输理论:应用于STM尖端诱导的量子点和MOSFET。
机译:有序SiGe点上的应变MOSFET
机译:有序SiGe点上的应变MOSFET