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A super cut-off CMOS (SCCMOS) scheme for 0.5-V supply voltage with picoampere stand-by current

机译:超级截止CMOS(SCCMOS)方案,可提供0.5V的电源电压并具有皮安级的待机电流

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摘要

A super cut-off CMOS (SCCMOS) scheme is proposed and demonstrated by measurement to achieve high-speed and low stand-by current CMOS VLSIs in sub-1-V supply voltage regime. By overdriving the gate of a cut-off MOSFET, the SCCMOS suppresses leakage current below 1 pA per logic gate in a stand-by mode while high-speed operation in an active mode is possible with low-threshold voltage of 0.1-0.2 V. The SCCMOS pushes the low-voltage operation limit 0.2 V further down compared with conventional schemes while maintaining the same stand-by current level.
机译:提出并通过测量证明了超截止CMOS(SCCMOS)方案,以在低于1V的电源电压条件下实现高速和低待机电流CMOS VLSI。通过在截止模式下过驱动截止MOSFET的栅极,SCCMOS可以将每个逻辑门的泄漏电流抑制在1 pA以下,而在主动模式下可以以0.1-0.2 V的低阈值电压进行高速操作。与传统方案相比,SCCMOS将低压工作极限进一步降低了0.2 V,同时保持了相同的待机电流水平。

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