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Design of high-Q varactors for low-power wireless applications using a standard CMOS process

机译:使用标准CMOS工艺为低功耗无线应用设计高Q变容二极管

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New applications such as wireless integrated network sensors (WINS) require radio-frequency transceivers consuming very little power compared to usual mainstream applications, while still working in the ultra-high-frequency range. For this kind of application, the LC-tank-based local oscillator remains a significant contributor to the overall receiver power consumption. This statement motivates the development of good on-chip varactors available in a standard process. This paper describes and compares the available solutions to realize high-Q, highly tunable varactors in a standard digital CMOS submicrometer process. On this basis, quality factors in excess of 100 at 1 GHz, for a tuning ratio reaching two, have been measured using a 0.5-/spl mu/m process.
机译:与常规的主流应用相比,诸如无线集成网络传感器(WINS)之类的新应用要求射频收发器消耗的功率非常小,同时仍能在超高频范围内工作。对于这种应用,基于LC储罐的本地振荡器仍然是导致整体接收器功耗的重要因素。该声明激励了标准工艺中可用的优质片上变容二极管的开发。本文描述并比较了在标准数字CMOS亚微米工艺中实现高Q,高可调变容二极管的可用解决方案。在此基础上,使用0.5- / splμm/ m的工艺测量了1 GHz时调谐比达到2时超过100的质量因数。

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