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Design of high-Q varactors for low-power wireless applications using a standard CMOS process

机译:使用标准CMOS工艺为低功耗无线应用设计高Q变容二极管

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The power consumption of an LC-tank oscillator is strongly affected by the varactor quality factor, whether the inductor is on- or off-chip. This paper proposes a new solution to realize high-Q, highly tunable on-chip varactors in a standard CMOS process, achieving a quality factor higher than 100 at 1 GHz, for a tuning ratio of 2. Other solutions are described and their respective advantages compared, while their characteristics are measured for a 0.5 /spl mu/m process.
机译:无论电感是片内还是片外,LC储罐振荡器的功耗都受到变容二极管品质因数的强烈影响。本文提出了一种新的解决方案,该解决方案可以在标准CMOS工艺中实现高Q,高度可调的片上变容二极管,在2 GHz的调谐比下,在1 GHz时实现高于100的品质因数。相比之下,虽然它们的特性是针对0.5 / spl mu / m的过程进行测量的。

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