首页> 外文期刊>IEEE Journal of Solid-State Circuits >Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage
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Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

机译:自适应主体偏置可减少芯片间和芯片内参数变化对微处理器频率和泄漏的影响

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摘要

Bidirectional adaptive body bias (ABB) is used to compensate for die-to-die parameter variations by applying an optimum pMOS and nMOS body bias voltage to each die which maximizes the die frequency subject to a power constraint. Measurements on a 150 nm CMOS test chip which incorporates on-chip ABB, show that ABB reduces variation in die frequency by a factor of seven, while improving the die acceptance rate. An enhancement of this technique, that compensates for within-die parameter variations as well, increases the number of dies accepted in the highest frequency bin. ABB is therefore shown to provide bin split improvement in the presence of increasing process parameter variations.
机译:双向自适应主体偏置(ABB)用于通过向每个芯片施加最佳pMOS和nMOS主体偏置电压来补偿芯片间的参数变化,从而在受到功率限制的情况下最大化芯片频率。在结合了片上ABB的150 nm CMOS测试芯片上进行的测量表明,ABB将芯片频率的变化降低了七倍,同时提高了芯片接受率。这种技术的增强也可以补偿晶粒内的参数变化,从而增加了最高频率仓中可接受的晶粒数量。因此,在工艺参数变化不断增加的情况下,ABB被证明可改善料槽分离。

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