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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators
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Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators

机译:电子温度补偿的硅体声谐振器参考振荡器

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The paper describes the design and implementation of an electronically temperature compensated reference oscillator based on capacitive silicon micromechanical resonators. The design of a 5.5-MHz silicon bulk acoustic resonator has been optimized to offer high quality factor (${>}$ 100 000) while maintaining tunability in excess of 3000 ppm for fine-tuning and temperature compensation. Oscillations are sustained with a CMOS amplifier. When interfaced with the temperature compensating bias circuit, the oscillator exhibits a frequency drift of 39 ppm over 100 $,^{circ}$C as compared to an uncompensated frequency drift of 2830 ppm over the same range. The sustaining amplifier and compensation circuitry were fabricated in a 2P3M 0.6-$mu$ m CMOS process.
机译:本文介绍了基于电容硅微机械谐振器的电子温度补偿参考振荡器的设计和实现。 5.5 MHz硅体声波谐振器的设计已经过优化,可提供高品质因数($ {>} $ 100 000),同时可调谐性和温度保持超过3000 ppm的可调谐性赔偿。 CMOS放大器可维持振荡。当与温度补偿偏置电路连接时,与相同范围内的2830 ppm的未补偿频率漂移相比,振荡器在100 $,^ {circ} $ C上的频率漂移为39 ppm。 。维持放大器和补偿电路采用2P3M0.6-μμmCMOS工艺制造。

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