首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 19.5-GHz 28-nm Class-C CMOS VCO, With a Reasonably Rigorous Result on 1/f Noise Upconversion Caused by Short-Channel Effects
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A 19.5-GHz 28-nm Class-C CMOS VCO, With a Reasonably Rigorous Result on 1/f Noise Upconversion Caused by Short-Channel Effects

机译:一个19.5-GHz 28-nm类CMOS VCO,在短信效应引起的1 / F噪声上具有合理严格的结果

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摘要

Class-C operation is leveraged to implement a K-band CMOS voltage-controlled oscillator (VCO) where the upconversion of 1/f current noise from the cross-coupled transistors in the oscillator core is robustly contained at a very low level. Implemented in a bulk 28-nm CMOS technology, the 12%-tuning-range VCO shows a phase noise as low as -112 dBc/Hz at 1-MHz offset (-86 dBc/Hz at 100 kHz offset) from a 19.5 GHz carrier while consuming 20.7 mW, achieving a figure of merit (FoM) of -185 dBc/Hz. The design is complemented by a theoretical investigation of 1/f noise upconversion caused by short-channel effects in the cross-coupled transistors, obtaining the first instance of a closed-form phase noise expression in the 1/f(3) region.
机译:利用Class-C操作以实现K频带CMOS电压控制的振荡器(VCO),其中来自振荡器核中的交叉耦合晶体管的1 / F电流噪声的上升率鲁棒地包含在非常低的水平。在批量28-NM CMOS技术中实现,12%-Tuning-Range VCO从19.5GHz的1-MHz偏移量(-86 dBc / Hz)下显示出低至-112dBc / hz的相位噪声承载载体,同时消耗20.7兆瓦,实现-185 dBc / hz的优点(FOM)。该设计通过交叉耦合晶体管中的短信道效应引起的1 / f噪声上变化的理论研究,获得了1 / F(3)区域中的闭合相位噪声表达的第一实例。

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