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首页> 外文期刊>Solid-State Circuits, IEEE Journal of >A 1.4-µW 24.9-ppm/°C Current Reference With Process-Insensitive Temperature Compensation in 0.18-µm CMOS
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A 1.4-µW 24.9-ppm/°C Current Reference With Process-Insensitive Temperature Compensation in 0.18-µm CMOS

机译:1.4μW24.9ppm /°C电流基准,在0.18μmCMOS中具有对工艺不敏感的温度补偿

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摘要

This paper presents a trim-free low-voltage and low-power CMOS current reference which achieves high current stability to temperature variation. In order to achieve process-insensitive temperature compensation, the proposed circuit employs ratio between the process-independent temperature coefficients of resistor and compensation voltage. The proposed current reference is implemented in 0.18-µm CMOS technology and consumes 1.4 µW from a 1-V supply. It achieves temperature coefficient of 24.9 ppm/°C with 0 °C to 100 °C of temperature variation without trimming, which is the lowest among the recently reported CMOS current references.
机译:本文提出了一种免修整的低压低功耗CMOS电流基准,该基准可实现对温度变化的高电流稳定性。为了实现对过程不敏感的温度补偿,该电路采用了电阻的过程无关温度系数与补偿电压之间的比率。拟议的电流基准采用0.18 µm CMOS技术实现,并通过1 V电源消耗1.4 µW的电流。在0°C至100°C的温度变化范围内,它无需修整即可达到24.9 ppm /°C的温度系数,这是最近报道的CMOS电流基准中最低的。

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