A 0.41 μA Standby Leakage 32 kb Embedded SRAM with Low-Voltage Resume-Standby Utilizing All Digital Current Comparator in 28 nm HKMG CMOS

摘要

We propose low-leakage current embedded SRAMs with high-performance for mobile applications. The proposed SRAM has two standby modes depending on temperature; one is a low-voltage resume-standby mode to reduce the standby current $({rm I}_{rm STBY})$ more effectively at room temperature, and the other is the conventional resume-standby to reduce ${rm I}_{rm STBY}$ effectively at high temperature. These schemes are implemented in a single SRAM macro with an all-digital current comparator (ADCC) that chooses either mode by monitoring ${rm I}_{rm STBY}$ automatically. ADCC has a time to digital converter (TDC) which is suitable for leakage measurement. Moreover, the proposed monitoring sequence can compensate the error of the measurement caused by the variation of the MOSFETs. A test chip was fabricated using 28 nm HKMG CMOS technology. The proposed 32 kb SRAM achieves 0.41 $mu{rm A}$ standby leakage which is half of the conventional value. This SRAM also realizes a high-speed operation with an access time of 420 ps.