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The Next Generation 64b SPARC Core in a T4 SoC Processor

机译:T4 SoC处理器中的下一代64b SPARC内核

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The SPARC T4 processor introduces the next generation multi-threaded 64b core to deliver up to 5x integer and 7x floating-point single-thread performance improvement over its predecessor. The chip integrates eight cores, an 8-Bank 4 MB L3 Cache, a 768 GB/sec crossbar, a memory controller, PCI Gen2.0, 10 Gb Ethernet and cache coherency with 2.4 Tb/s bandwidth high-speed I/Os. The dual-issue, out-of-order execution core (S3) features a new 16-stage integer pipeline, extensive branch predictions, dynamic threading and an enhanced cryptographic processing unit. The 406 mm$^{2}$ die contains 855 million transistors and 2.6 million flip-flops in TSMC's 40nm process utilizing 11 Cu metals and four transistor types. Enhanced physical design methodologies and extensive power management features enable 3.0 GHz operation in the same power envelope of its predecessor. Logically complex SRAMs deploy techniques to support out-of-order execution core while addressing area, timing and power challenges. The power supply calibration circuit improves yield by reducing 70% of conventional voltage guard-band for the speed and power constrained design.
机译:SPARC T4处理器引入了下一代多线程64b内核,其性能比其前代产品提高了5倍整数和7倍浮点单线程性能。该芯片集成了八个内核,一个8组4 MB L3高速缓存,一个768 GB /秒的交叉开关,一个内存控制器,PCI Gen2.0、10 Gb以太网和具有2.4 Tb / s带宽高速I / O的高速缓存一致性。双重发行,无序执行核心(S3)具有新的16级整数流水线,广泛的分支预测,动态线程和增强的密码处理单元。台积电(TSMC)采用11种金属金属和4种晶体管类型的40nm工艺,其406 mm2的芯片包含8.55亿个晶体管和260万个触发器。增强的物理设计方法和广泛的电源管理功能使3.0 GHz在与其前代产品相同的功率范围内运行。逻辑上复杂的SRAM部署技术以支持乱序执行内核,同时解决面积,时序和功耗挑战。电源校准电路通过为速度和功率受限的设计减少70%的常规电压保护带来提高产量。

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