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A 28 nm FDSOI Integrated Reconfigurable Switched-Capacitor Based Step-Up DC-DC Converter With 88% Peak Efficiency

机译:基于28 nm FDSOI集成可重构开关电容的升压型DC-DC转换器,峰值效率为88%

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摘要

This paper presents a fully integrated, reconfigurable switched-capacitor based step-up DC-DC converter in a 28 nm FDSOI process. Three reconfigurable step-up conversion ratios (5/2, 2/1, 3/2) have been implemented which can provide a wide range of output voltage from 1.2 V to 2.4 V with a nominal input voltage of 1 V. We propose a topology for the 5/2 mode which improves the efficiency by reducing the bottom-plate parasitic loss compared to a conventional series-parallel topology, while delivering the same amount of output power. Further, the proposed topology benefits from using core 1 V devices for all charge-transfer switches without incurring any voltage overstress. The converter can deliver load current in the range of 10 µA to 500 µA, achieving a peak efficiency of 88%, using only on-chip MOS and MOM capacitors for a high density implementation.
机译:本文提出了一种采用28 nm FDSOI工艺的完全集成,可重新配置的开关电容器升压DC-DC转换器。已经实现了三种可重新配置的升压转换比(5 / 2、2 / 1、3 / 2),它们可在标称输入电压为1V的情况下提供从1.2V至2.4V的宽范围输出电压。 5/2模式的拓扑结构,与传统的串并联拓扑结构相比,可通过减少底板的寄生损耗来提高效率,同时提供相同数量的输出功率。此外,所建议的拓扑结构受益于将核心1 V器件用于所有电荷转移开关,而不会引起任何电压过应力。该转换器仅使用片上MOS和MOM电容器即可实现高密度实现,可提供10 µA至500 µA的负载电流,实现88%的峰值效率。

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