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首页> 外文期刊>Solid-State Circuits, IEEE Journal of >A High-Swing 45 Gb/s Hybrid Voltage and Current-Mode PAM-4 Transmitter in 28 nm CMOS FDSOI
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A High-Swing 45 Gb/s Hybrid Voltage and Current-Mode PAM-4 Transmitter in 28 nm CMOS FDSOI

机译:采用28 nm CMOS FDSOI的高摆幅45 Gb / s混合电压和电流模式PAM-4发送器

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Pushed by the ever-increasing demand of high-speed connectivity, next generation 400 Gb/s electrical links are targeting PAM-4 modulation to limit channel loss and preserve link budget. Compared to NRZ, a higher amplitude is desirable to counteract the 1/3 reduction of PAM-4 vertical eye opening. However, linearity is also key, and PAM-4 levels must be precisely spaced to preserve the horizontal eye opening advantage it has over NRZ. This paper presents a 45 Gb/s PAM-4 transmitter able to deliver a very large output swing with enhanced linearity and state-of-the-art efficiency. Built around a hybrid combination of current-mode and voltage-mode topologies, the driver is embedded into a 4-taps 5-bits feed-forward equalizer (FFE), and allows tuning the output impedance to ensure good source termination. Implemented in 28 nm CMOS FDSOI process, the full transmitter includes a half-rate serializer, duty-cycle correction circuit, 2 kV HBM ESD diodes, and delivers a full swing of 1.3 Vppd at 45 Gb/s, while drawing only 120 mA from 1 V supply. The power efficiency is ~ 2 times better than previously reported PAM-4 transmitters.
机译:在对高速连接的需求不断增长的推动下,下一代400 Gb / s电气链路以PAM-4调制为目标,以限制信道损耗并节省链路预算。与NRZ相比,需要更高的幅度来抵消PAM-4垂直眼图张开度的1/3减小。但是,线性度也是关键,PAM-4电平必须精确隔开,以保持其相对于NRZ的水平睁眼优势。本文提出了一种45 Gb / s PAM-4发射机,该发射机能够提供很大的输出摆幅,并具有增强的线性度和最先进的效率。该驱动器基于电流模式和电压模式拓扑的混合组合而构建,被嵌入到一个4抽头5位前馈均衡器(FFE)中,并允许调整输出阻抗以确保良好的电源端接。完整的发射器采用28 nm CMOS FDSOI工艺实现,包括半速率串行器,占空比校正电路, 2 kV HBM ESD二极管,在45 Gb / s的速度下可提供1.3 Vppd的全摆幅,而仅消耗120 1 V电源时的mA。功率效率比以前报道的PAM-4发射器高约2倍。

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