A JFET-CMOS radiation-tolerant charge-sensitive preamplifier

摘要

A monolithic charge-sensitive preamplifier based on n-channel junction field-effect transistors (JFETs) and p-channel MOS has been realized for applications with microelectrode detectors in elementary particle physics. Radiation resistance tests carried out with the preamplifier exposed to gamma -rays emitted by a /sup 60/Co source have shown no significant increase of the equivalent noise source up to 150-krd absorbed dose.