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Mechanochemical bulk synthesis and e-beam growth of thin films of Sb_2Se_3 photovoltaic absorber

机译:Sb_2Se_3光伏吸收体薄膜的机械化学本体合成和电子束生长

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摘要

Antimonselite (Sb2Se3) bulk material has been prepared by mechanical alloying through ball milling of the elemental precursors antimony (Sb) and selenium (Se) in place of conventional solid state synthesis. X-ray diffraction (XRD), Raman spectroscopy studies and Energy dispersive spectroscopy (EDS) studies confirm the formation of polycrystalline Sb2Se3 along with elemental Sb. The as-milled bulk material was used as source to deposit Sb2Se3 thin films by e-beam deposition. Thin films have been grown at a substrate temperature of 373 K with an optimal electron beam current (Ib) of 30 mA at fixed voltage of 5 kV. The films were studied using XRD and Raman spectroscopy for the structural and phase analyses. Scanning electron microscopy (SEM) studies and energy dispersive spectroscopy (EDS) measurements revealed the formation of near stoichiometric thin films with smooth and uniform surface. Rutherford backscattered spectrometry (RBS) and proton induced Xray emission spectroscopy (PIXE) tools were employed to confirm the chemical composition of as-grown Sb2Se3 thin films. Optical transmission spectrum showed a very sharp transition near the fundamental absorption edge similar to 1.26 eV. The films exhibited an average absorption coefficient values exceeding 10(4) cm(-1) in the visible region making it a promising material for solar absorber in thin film solar cell.
机译:通过对元素前驱体锑(Sb)和硒(Se)进行球磨,以机械合金化方法代替传统的固态合成方法,制备了锑矿(Sb2Se3)块状材料。 X射线衍射(XRD),拉曼光谱研究和能量色散光谱(EDS)研究证实了多晶Sb2Se3与元素Sb的形成。研磨后的块状材料被用作通过电子束沉积来沉积Sb2Se3薄膜的源。薄膜在373 K的基板温度下以5 mA的固定电压在30 mA的最佳电子束电流(Ib)下生长。使用XRD和拉曼光谱对薄膜进行了结构和相分析。扫描电子显微镜(SEM)研究和能量色散光谱(EDS)测量揭示了表面光滑且均匀的近化学计量薄膜的形成。使用Rutherford背散射光谱(RBS)和质子诱导X射线发射光谱(PIXE)工具来确定Sb2Se3薄膜的化学成分。光学透射光谱在基本吸收边缘附近显示出非常陡峭的跃迁,类似于1.26 eV。这些薄膜在可见光区域的平均吸收系数值超过> 10(4)cm(-1),这使其成为薄膜太阳能电池中太阳能吸收器的有希望的材料。

著录项

  • 来源
    《Solar Energy》 |2018年第1期|56-63|共8页
  • 作者单位

    SRM Univ Kattankulathur, Res Inst, Dept Phys & Nanotechnol, Madras 603203, Tamil Nadu, India;

    Natl Univ Singapore, Ctr Ion Beam Applicat, Dept Phys, Singapore, Singapore;

    Natl Univ Singapore, Ctr Ion Beam Applicat, Dept Phys, Singapore, Singapore;

    Natl Univ Singapore, Ctr Ion Beam Applicat, Dept Phys, Singapore, Singapore;

    Indian Inst Technol Madras, Dept Phys, Semicond Lab, Madras, Tamil Nadu, India;

    SRM Univ Kattankulathur, Res Inst, Dept Phys & Nanotechnol, Madras 603203, Tamil Nadu, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Sb2Se3; Solar absorber; E-beam evaporation; Raman spectroscopy;

    机译:Sb2Se3;太阳能吸收器;电子束蒸发;拉曼光谱;

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