Effect of heat treatment in sulfur on structural, optical and electrical properties of thermally evaporated In_2S_3 thin films

摘要

Crystallinity, optical band gap, resistivity and photoresponse of thermally evaporated In2S3 thin films deposited at a temperature of 350 degrees C and further annealed in sulfur vapour at different temperature range of 200-300 degrees C is investigated. It is observed that with an increase of annealing temperature, predominantly beta-In2S3 phase is formed and the optical band gap for indirect allowed transitions increases from 1.6 eV to 2.0 eV and for direct allowed transitions from 2.3 eV to 2.7 eV. The electrophysical properties indicate that the activation mechanism of conductivity with an activation energy in the range of 0.5-0.73 eV, which is typical for the presence of indium vacancies in the beta-In2S3 crystal structure and for the replacement of sulfur by oxygen atoms. It is also noted that sulfur annealing at temperatures of 250-300 degrees C leads to an increase in the conductivity and photosensitivity of films, which is suitable for photovoltaic applications.