Isotropic Piezoresistance in Polycrystalline Silicon for In-plane Shear- and Normal-Stress Gauges

摘要

In this study, an isotropic piezoresistance equation for polycrystalline silicon(poly-Si), focusing particularly on shear piezoresistance in p-type poly-Si, is derived. The total number of independent piezoresistance coefficients to describe the isotropic piezoresistance effect of poly-Si is found to be two. It is also found that, for an isotropic poly-Si-Hall-type piezoresistor, the change in resistance is induced only by normal stresses while the change in transverse voltage is induced only by shear stresses.