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Development Status of Type Ⅱ Superlattice Infrared Detector in JAXA

机译:JAXAⅡ型超晶格红外探测器的发展现状

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摘要

We present the development status of a Type Ⅱ superlattice (T2SL) infrared detector for future space applications in JAXA. InAs/GaSb T2SL is the only known infrared material that has a theoretically predicted higher performance than HgCdTe. We first fabricated a single-pixel detector with a cutoff wavelength of 6 μm. The detector is a pin photodiode with a superlattice consisting of 9 InAs monolayers (MLs) and 7 GaSb MLs. The dark current density of the detector is 1.8 × 10~(-4) A/cm~2 at a bias voltage of -100 mV. We also present the results of an optical evaluation of the detector. The cutoff wavelength is 5.5 μm at 30 K. The responsivity is 0.3 ± 0.05 AAV at 4.5 μm. We also show the development of an array detector with a cutoff wavelength of 6 μm. However, further improvements are required for developing array detectors with longer cutoff wavelengths.
机译:我们介绍了用于JAXA未来空间应用的Ⅱ型超晶格(T2SL)红外探测器的发展现状。 InAs / GaSb T2SL是唯一已知的红外材料,其理论上比HgCdTe具有更高的性能。我们首先制造了一个截止波长为6μm的单像素检测器。该检测器是具有9个InAs单层(ML)和7个GaSb ML组成的超晶格的pin光电二极管。在-100 mV的偏置电压下,检测器的暗电流密度为1.8×10〜(-4)A / cm〜2。我们还将介绍检测器的光学评估结果。 30 K时的截止波长为5.5μm。4.5μm时的响应度为0.3±0.05 AAV。我们还展示了截止波长为6μm的阵列检测器的发展。然而,开发具有更长截止波长的阵列检测器需要进一步的改进。

著录项

  • 来源
    《Sensors and materials》 |2014年第4期|225-234|共10页
  • 作者单位

    Earth Observation Research Center, Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-0035, Japan;

    Earth Observation Research Center, Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-0035, Japan;

    Earth Observation Research Center, Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-0035, Japan;

    College of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577, Japan;

    Institute of Technology and Science, The University of Tokushima, 2-1 Minamijyousanjima-cho, Tokushima 770-8506, Japan;

    Institute of Technology and Science, The University of Tokushima, 2-1 Minamijyousanjima-cho, Tokushima 770-8506, Japan;

    Advanced ICT Research Institute, National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi Koganei, Tokyo 184-8795, Japan;

    Advanced ICT Research Institute, National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi Koganei, Tokyo 184-8795, Japan;

    Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan;

  • 收录信息 美国《科学引文索引》(SCI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    InAs/GaSb Type Ⅱ superlattice infrared detectors; mid-wave infrared;

    机译:InAs / GaSbⅡ型超晶格红外探测器;中波红外;

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