Electroactive gate materials for a hydrogen peroxide sensitiveEMOSFET

摘要

Describes the detection principle of a hydrogen peroxide sensornbased on the electrolyte metal oxide semiconductor field effectntransistor (EMOSFET) and possibilities of using differentntypes of redox materials as the gate material for the sensor withnrespect to the sensitivity and detection limit. After discussing thenfundamentals of hydrogen peroxide detection and a short description ofnthe EMOSFET characteristics in terms of its thresholdnvoltage, the basic measuring principle of hydrogen peroxide using thenEMOSFET is shown. The EMOSFET with electro-activengate materials such as iridium oxide, potassium ferric ferrocyanide, andnOs-polyvinylpyridine containing peroxidase, have been studied. Thesendifferent materials are compared with each other with respect to theirnsensitivity, detection limit, and stability. The sensitivity of thensensors is improved by applying an external current between the gate andnthe solution