Gas response and modeling of NO-sensitive thin-Pt SiC schottky diodes

摘要

Thin-Pt SiC schottky diodes responding to NO gas concentrations from 500 down to 10 ppm at temperatures up to 400℃ were fabricated. The response followed a simple Langmuir adsorption model for all concentrations equal or superior to 100 ppm. From a linear correlation of the conductance (G) and current (I) in a G/I x G plot, it was possible to evaluate accurately the series resistance, ideality factor and barrier height changes of the devices due to exposure to NO gas, further confirming the model adopted as well as the quality of the devices.