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首页> 外文期刊>Sensors and Actuators >Low temperature operating SnO_2 thin film sensor loaded with WO_3 micro-discs with enhanced response for NO_2 gas
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Low temperature operating SnO_2 thin film sensor loaded with WO_3 micro-discs with enhanced response for NO_2 gas

机译:装有WO_3微盘的低温操作SnO_2薄膜传感器,对NO_2气体的响应增强

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摘要

Highly sensitive and novel sensor structure comprising of SnO_2 film and WO_3 micro-discs has been developed for trace level detection of NO_2 gas at lower operating temperature. Loading of WO_3 on SnO_2 film surface in the form of uniformly distributed micro-discs (8 nm thin, 600 μm dia.) was found to enhance the sensing response (5.4× 10~4) with fast response speed (67s) at 100℃. Spill over of NO_2 gas molecules by WO_3 micro-discs on the uncovered surface of SnO_2 film and subsequently its reaction kinetics at Sn and W sites could be responsible for modulation of depletion width at n-n semiconductor heterojunction and may play an important role in enhanced response characteristics.
机译:已经开发了由SnO_2薄膜和WO_3微盘组成的高灵敏度和新颖的传感器结构,用于在较低的工作温度下检测痕量的NO_2气体。发现WO_3以均匀分布的微盘(8 nm薄,直径为600μm直径)的形式加载在SnO_2薄膜表面上,以100℃的快速响应速度(67s)增强了传感响应(5.4×10〜4)。 。 WO_3微盘在未覆盖的SnO_2膜表面上溢出NO_2气体分子,随后其在Sn和W位点的反应动力学可能是nn半导体异质结耗尽层宽度的调节因素,可能在增强响应特性中起重要作用。

著录项

  • 来源
    《Sensors and Actuators》 |2012年第1期|p.1114-1118|共5页
  • 作者单位

    Department of Physics and Astrophysics, University of Delhi. Delhi 110007, India;

    Department of Physics. Miranda House, University of Delhi, Delhi 110007, India;

    Department of Physics and Astrophysics, University of Delhi. Delhi 110007, India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    sensor; semiconductor; SnO_2 thin films; No_2 gas;

    机译:传感器;半导体;SnO_2薄膜;2号气;

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