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Narrow-line light emission from porous silicon multilayers and microcavities

机译:多孔硅多层膜和微腔的窄线发光

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Porous silicon multilayers and microcavities, prepared by the pulsed electrochemical etching method, exhibit a variety of reflectivity and photoluminescence spectra. A comparison of the measured results with those calculated based on the transfer matrix method and quantum-box model reveals that the variation of the spectra can be attributed to the change in wavelength position of the stop-band of distributed Bragg reflectors and the maximum of the broad light emission of porous silicon. Different confined electric field modes appear in three different cases of porous silicon microcavities. Their different characteristics are summarized and considered as criteria to distinguish species of the porous silicon microcavities from their photoluminescence spectra.
机译:通过脉冲电化学蚀刻方法制备的多孔硅多层膜和微腔具有多种反射率和光致发光光谱。将测量结果与基于传递矩阵法和量子盒模型计算得到的结果进行比较,结果表明,光谱的变化可归因于分布式布拉格反射器阻带波长位置的变化以及最大的反射率。多孔硅的广泛发光。在三种不同的多孔硅微腔情况下,会出现不同的受限电场模式。总结了它们的不同特性,并将其作为区分多孔硅微腔的种类和光致发光光谱的标准。

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