A finite element study of the stress and strain fields of InAs quantum dots embedded in GaAs

摘要

We report on a stress and strain analysis, using the finite element method, of the heterosystems of InAs quantum dots embedded in GaAs. The methodology of using the finite element method to simulate the lattice mismatch is discussed and a three-dimensional (3D) model of the heterostructure shows the 3D stress distribution in the InAs islands embedded in a matrix of GaAs substrate and cap layer. The initial shape of the InAs islands is pyramidal. The stress and strain distribution calculated corresponds well with the strain induced by the lattice mismatch.