Electrically-induced dipole domain in the junction-barrier structure under the high-level injection condition

摘要

The silicon junction-barrier structure with a normally off-vertical channel is studied numerically. It is found that a dipole domain appears in the drift region as a result of the increasing drain biasing voltage. This electrically-induced dipole domain comes with the shrinking of the conductivity-modulation region, which is formed in the drift region due to high-level carrier injection. Between the two poles of the domain is a charge-neutral area in which the drain voltage drops. The width of the domain and the electric field in the domain vary nearly linearly with the drain biasing voltage.