Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells

摘要

The spectral and polarization dependences of intraband light absorption in n- and p-doped structures with InAs/GaAs quantum dots covered by InGaAs layers were studied experimentally and theoretically. The transmittance of p- and s-polarized mid-infrared radiation was studied in a multi-pass sample geometry. Elastic strain, piezoelectric fields and a complex valence band structure were taken into account in calculations of the energy spectrum, the carrier wavefunctions and intraband optical matrix elements. The experimentally determined value of the absorption cross section corresponding to |000 > -> |001 > intraband electron transitions is 4.1 x 10(-15) cm(2). Light absorption related to intraband hole transitions was found to be significantly smaller. The dispersion of the dot sizes was evaluated using the experimentally determined spectral widths of intraband absorption peaks.