首页> 外文期刊>Semiconductor science and technology >A pad roughness model for the analysis of lubrication in the chemical mechanical polishing of a silicon wafer
【24h】

A pad roughness model for the analysis of lubrication in the chemical mechanical polishing of a silicon wafer

机译:用于分析硅晶片化学机械抛光中的润滑的抛光垫粗糙度模型

获取原文
获取原文并翻译 | 示例
       

摘要

The slurry flow beneath the wafer in chemical mechanical polishing (CMP), involving the chemical reaction and the lubrication, is critical to the planarity and surface quality of a large-sized silicon wafer. In order to analyse the effects of pad roughness and some important operating parameters on the slurry flow with the suspended abrasives between the wafer and the pad, a complicated three-dimensional model based on the micropolar fluid theory, Brinkman equations and Darcy's law is developed. The effects of pad roughness and vital parameters on the slurry flow between the pad and the wafer are well discussed.
机译:涉及化学反应和润滑的化学机械抛光(CMP)中,晶片下方的浆料流对大型硅晶片的平面度和表面质量至关重要。为了分析垫粗糙度和一些重要的操作参数对晶片与垫之间悬浮的磨料的悬浮液流动的影响,建立了基于微极性流体理论,Brinkman方程和达西定律的复杂三维模型。讨论了垫的粗糙度和重要参数对垫和晶片之间的浆料流动的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号