Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

摘要

The resistivity of hydrothermally grown ZnO single crystals increased from ～10~3 Ω cm to ～10~6 Ω cm after 1.8 MeV electron irradiation with a fluence of ～10~(16) cm~(-2), and to ～10~9 Ω cm as the fluence increased to ～10~(18) cm~(-2). Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 1018 cm"2, the normalized TSC signal increased by a factor of ～100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 ℃, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.